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We show efficient wide-tunable mm-wave-to-optical transduction (20 to 70 GHz at -9 to -18 dBc) using a triple-microring modulator. Integrated monolithically with a 18% bandwidth LNA, it generates sidebands with <−35 dBm RF input. 

We demonstrate a dual-cavity modulator based mm-wave to optical converter on GF45SPCLO platform. An optical energy conversion efficiency at -29.8 dB and a side-band SNR at 30.7 dB are reported. 

We demonstrate a Dual Active-Cavity RF modulator combining T-shaped spoked junction with a novel “half-rib” waveguide in a monolithic electronic-photonic platform. We measure a sideband efficiency of -52 dB at 66 GHz RF carrier frequency. 

We demonstrate a Dual Active-Cavity RF modulator combining T-shaped spoked junction with a novel “half-rib” waveguide in a monolithic electronic-photonic platform. We measure a sideband efficiency of -52 dB at 66 GHz RF carrier frequency. 

We use a general theory to show a new class of bandpass filter shapes for coupled-resonator filters that provides the lowest insertion loss and the narrowest bandwidth achievable for a given intrinsic Q and bandwidth. 

We demonstrate a scheme for microring resonators to operate as standing-wave resonators while eliminating reflections and maintaining traveling-wave-resonator-like through-port response, potentially enabling interdigitated p-n junction microring modulators to achieve higher performance than other junction geometries. 

We demonstrate device field characterization using NSOM collection and interaction measurement modes via the backside buried-oxide of large scale photonic circuits fabricated in monolithic electronics-photonics CMOS platforms (here a microdisk resonator) post-processed using flip-chip substrate-removal. 

Convergence of high-performance silicon photonics and electronics, monolithically integrated in state-of-the-art CMOS platforms, is the holy grail for enabling the ultimate efficiencies, performance, and scaling of electronic-photonic systems-on-chip. It requires the emergence of platforms that combine state-of-the-art RF transistors with optimized silicon photonics, and a generation of photonic device technology with ultralow energies, increased operating spectrum, and the elimination of power-hungry thermal tuning. In this paper, in a co-optimized monolithic electronics-photonics platform (GlobalFoundries 45CLO), we turn the metal-oxide-semiconductor (MOS) field-effect transistor’s basic structure into a novel, highly efficient MOS capacitor ring modulator. It has the smallest ring cavity (1.5 μm radius), largest corresponding spur-free free spectral range ( FSR = 8.5    THz ), and record 30 GHz/V shift efficiency in the O-band among silicon modulators demonstrated to date. With 1 V pp RF drive, we show an open optical eye while electro-optically tuning the modulator to track over 400 pm (69 GHz) change in the laser wavelength (using 2.5 V DC range). A 90 GHz maximum electro-optic resonance shift is demonstrated with under 40 nW of power, providing a strong nonthermal tuning mechanism in a CMOS photonics platform. The modulator has a separately optimized body layer but shares the gate device layer and the gate oxide with 45 nm transistors, while meeting all CMOS manufacturability design rules. This type of convergent evolution of electronics and photonics may be the future of platforms for high-performance systems-on-chip. 

Adiabatic microrings with opposing p/n contacts achieve full carrier sweepout in reverse bias and energy-efficient carrier injection in forward bias, exhibiting 200GHz/V peak shift in C-band for athermal tuning over a 220 GHz range. 

We report the first photonic crystal microcavity modulator realized in a foundry CMOS photonics platform. Bandwidth of 2.8 GHz and 5 Gbps data rate demonstrated utilizing an interdigitated p-n junction in a WDM compatible structure.